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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFP21N60LPBFCopy
Newark Part No.63J6853
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id21A
Drain Source On State Resistance0.32ohm
On Resistance Rds(on)0.32ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd330W
Transistor Case StyleTO-247
Gate Source Threshold Voltage Max5V
Power Dissipation330W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFP21N60LPBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for zero voltage switching SMPS, uninterruptible power supply, telecom, server power supplies and motor control applications.
- Superfast body diode eliminates the need for external diodes in ZVS Applications
- Lower gate charge results in simple drive requirements
- Enhanced dV/dt capabilities offer improved ruggedness
- Higher gate voltage threshold offers improved noise immunity
Applications
Industrial, Power Management, Communications & Networking, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.32ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
330W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
On Resistance Rds(on)
0.32ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-247
Power Dissipation
330W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
