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IRFIB5N65APBF
Power MOSFET, N Channel, 650 V, 5.1 A, 0.93 ohm, TO-220FP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRFIB5N65APBF
Newark Part No.63J6738
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFIB5N65APBF
Newark Part No.63J6738
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5.1A
On Resistance Rds(on)0.93ohm
Drain Source On State Resistance0.93ohm
Transistor MountingThrough Hole
Power Dissipation Pd60W
Rds(on) Test Voltage10V
Transistor Case StyleTO-220FP
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.93ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
5.1A
Drain Source On State Resistance
0.93ohm
Power Dissipation Pd
60W
Transistor Case Style
TO-220FP
Power Dissipation
60W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate