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IRFD320PBF
Power MOSFET, N Channel, 400 V, 490 mA, 1.8 ohm, HVMDIP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRFD320PBF
Newark Part No.19K8159
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD320PBF
Newark Part No.19K8159
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id490mA
On Resistance Rds(on)1.8ohm
Drain Source On State Resistance1.8ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Transistor Case StyleHVMDIP
Gate Source Threshold Voltage Max4V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1.8ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.3W
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
490mA
Drain Source On State Resistance
1.8ohm
Rds(on) Test Voltage
10V
Transistor Case Style
HVMDIP
Power Dissipation
1.3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate