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IRFD210PBF
Power MOSFET, N Channel, 200 V, 600 mA, 1.5 ohm, HVMDIP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRFD210PBF
Newark Part No.19K8155
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD210PBF
Newark Part No.19K8155
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id600mA
Drain Source On State Resistance1.5ohm
On Resistance Rds(on)1.5ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Transistor Case StyleHVMDIP
Gate Source Threshold Voltage Max4V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Product Overview
The IRFD210PBF is a N-channel Power MOSFET with combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Automatic insertion
- End stackable
- Fast switching and ease of paralleling
Applications
Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.3W
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
600mA
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage
10V
Transistor Case Style
HVMDIP
Power Dissipation
1.3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability