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IRFD123PBF
Power MOSFET, N Channel, 100 V, 1.3 A, 0.27 ohm, HVMDIP, Through Hole
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ManufacturerVISHAY
Manufacturer Part NoIRFD123PBF
Newark Part No.31K1939
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFD123PBF
Newark Part No.31K1939
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.3A
On Resistance Rds(on)0.27ohm
Drain Source On State Resistance0.27ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd1.3W
Transistor Case StyleHVMDIP
Gate Source Threshold Voltage Max2V
Power Dissipation1.3W
No. of Pins4Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.27ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
1.3W
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1.3A
Drain Source On State Resistance
0.27ohm
Rds(on) Test Voltage
10V
Transistor Case Style
HVMDIP
Power Dissipation
1.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability