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ManufacturerVISHAY
Manufacturer Part NoIRFB17N50LPBF
Newark Part No.63J6708
Your Part Number
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFB17N50LPBF
Newark Part No.63J6708
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id16A
On Resistance Rds(on)0.32ohm
Drain Source On State Resistance0.32ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd200W
Transistor Case StyleTO-220
Gate Source Threshold Voltage Max5V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFB17N50LPBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Simple drive requirements
- Low trr and soft diode recovery
Applications
Industrial, Power Management, Signal Processing
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.32ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
200W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.32ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
Power Dissipation
200W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate