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IRF630SPBF
Power MOSFET, N Channel, 200 V, 9 A, 400 mohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.130 |
| 2500+ | $1.040 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,130.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF630SPBF
Newark Part No.63J7340
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
Drain Source On State Resistance400mohm
On Resistance Rds(on)0.4ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd3W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
400mohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.4ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate