STMICROELECTRONICS  STD2HNK60Z-1  Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V

STMICROELECTRONICS STD2HNK60Z-1

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Product Overview


The STD2HNK60Z-1 is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
  • Gate charge minimized
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • ESD improved capability
  • New high voltage benchmark

Applications

Industrial
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Product Information


  • Transistor Polarity N Channel
  • Continuous Drain Current Id 2A
  • Drain Source Voltage Vds 600V
  • On Resistance Rds(on) 4.4ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 3.75V
  • Power Dissipation Pd 45W
  • Transistor Case Style TO-251
  • No. of Pins 3Pins
  • Operating Temperature Max 150°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

Availability

Availability:  2,656

Available until stock is exhausted


  • 2,656 in stock for same day shipping

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $0.268 $0.268

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Price

Quantity List Price Your Price
1 - 9 $1.27
10 - 24 $1.15
25 - 99 $0.982
100 - 249 $0.911
250 - 499 $0.768
500 - 999 $0.707
1000 - 2499 $0.625
2500+ $0.564
 
 
Low

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