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STMICROELECTRONICS  STD2HNK60Z-1  Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V

STMICROELECTRONICS STD2HNK60Z-1

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STMICROELECTRONICS STD2HNK60Z-1

Product Overview

The STD2HNK60Z-1 is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
  • Gate charge minimized
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • ESD improved capability
  • New high voltage benchmark

Applications

Industrial

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
4.4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.75V
Power Dissipation Pd:
45W
Transistor Case Style:
TO-251
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Industrial

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