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STD2HNK60Z-1 - 

Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V

STD2HNK60Z-1 - Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V
STD2HNK60Z-1 - Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 3.75 V

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Manufacturer Part No:
STD2HNK60Z-1
Newark Part No.:
57P0735
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The STD2HNK60Z-1 is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
  • Gate charge minimized
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • ESD improved capability
  • New high voltage benchmark

Applications

Industrial

Product Information

:
N Channel
:
2A
:
600V
:
4.4ohm
:
10V
:
3.75V
:
45W
:
TO-251
:
3Pins
:
150°C
:
-
:
-
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