Print Page
CM200DU-24F
IGBT Module, Dual [Half Bridge], 200 A, 2.4 V, 890 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24F
Newark Part No.95B1855
Product RangeF Series
Technical Datasheet
No Longer Available
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DU-24F
Newark Part No.95B1855
Product RangeF Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current200A
Continuous Collector Current200A
Collector Emitter Saturation Voltage2.4V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd890W
Power Dissipation890W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM200DU-24F is a 1200V Trench gate design Dual IGBTMOD™ designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 400A Peak collector current
- 200A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
200A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
890W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate