CM200DU-24F - 

IGBT Array & Module Transistor, N Channel, 200 A, 1.2 kV, 890 W, 1.2 kV, Module

CM200DU-24F - IGBT Array & Module Transistor, N Channel, 200 A, 1.2 kV, 890 W, 1.2 kV, Module

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Manufacturer Part No:
Newark Part No.:
Product Range
F Series
Technical Datasheet:
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Product Overview

The CM200DU-24F is a 1200V Trench gate design Dual IGBTMOD™ designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
  • Low drive power
  • Low VCE (sat)
  • Discrete super-fast recovery free-wheel diode
  • Isolated baseplate for easy heat sinking
  • ±20V Gate-emitter voltage (C-E short)
  • 400A Peak collector current
  • 200A Emitter current


Motor Drive & Control, Power Management

Product Information

N Channel
F Series
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