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NTMD6P02R2G
Power MOSFET, P Channel, 20 V, 7.8 A, 33 mohm, SOIC, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTMD6P02R2G
Newark Part No.09R9661
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMD6P02R2G
Newark Part No.09R9661
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id7.8A
On Resistance Rds(on)0.027ohm
Drain Source On State Resistance33mohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2W
Gate Source Threshold Voltage Max880mV
Transistor Case StyleSOIC
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.027ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
7.8A
Drain Source On State Resistance
33mohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
880mV
Power Dissipation
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate