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NTLJS4114NT1G
Power MOSFET, N Channel, 30 V, 7.8 A, 35 mohm, WDFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 38 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.542 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$1,626.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTLJS4114NT1G
Newark Part No.10N9582
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.8A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.0203ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.3W
Transistor Case StyleWDFN
Gate Source Threshold Voltage Max550mV
Power Dissipation3.3W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
35mohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.3W
Gate Source Threshold Voltage Max
550mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
7.8A
On Resistance Rds(on)
0.0203ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
WDFN
Power Dissipation
3.3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65