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ON SEMICONDUCTOR  NSS12100XV6T1G  Bipolar (BJT) Single Transistor, PNP, -12 V, 100 MHz, 500 mW, -1 A, 200 hFE

ON SEMICONDUCTOR NSS12100XV6T1G
Technical Data Sheet (99.74KB) EN See all Technical Docs

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Product Overview

The NSS12100XV6T1G is a 1A PNP bipolar Transistor designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. It is miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-12V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
500mW
DC Collector Current:
-1A
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-563
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Bipolar (BJT) Single Transistor, PNP, -12 V, 100 MHz, 500 mW, -1 A, 200 hFE

ON SEMICONDUCTOR

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