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MUN5115T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA
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ManufacturerONSEMI
Manufacturer Part NoMUN5115T1G
Newark Part No.49X8875
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5115T1G
Newark Part No.49X8875
Technical Datasheet
Transistor PolaritySingle PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSC-70
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation310mW
Operating Temperature Max150°C
DC Current Gain hFE Min160hFE
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Single PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
-
Transistor Case Style
SC-70
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
3 Pin
Power Dissipation
310mW
DC Current Gain hFE Min
160hFE
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate