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MTD6N20ET4G
Power MOSFET, N Channel, 200 V, 6 A, 0.7 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoMTD6N20ET4G
Newark Part No.
Re-Reel45J1711
Cut Tape45J1711
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoMTD6N20ET4G
Newark Part No.
Re-Reel45J1711
Cut Tape45J1711
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id6A
Drain Source On State Resistance0.7ohm
On Resistance Rds(on)0.46ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd50W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.7ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
50W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.46ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate