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MTD6N20ET4G
Power MOSFET, N Channel, 200 V, 6 A, 0.7 ohm, TO-252 (DPAK), Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMTD6N20ET4G
Newark Part No.45J1711
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id6A
Drain Source On State Resistance0.7ohm
On Resistance Rds(on)0.46ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd50W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.7ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
50W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.46ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate