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| Quantity | Price |
|---|---|
| 1+ | $5.170 |
| 10+ | $4.890 |
| 25+ | $4.810 |
| 50+ | $4.710 |
| 100+ | $4.610 |
| 250+ | $4.540 |
| 500+ | $3.460 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMTB50P03HDLT4G
Newark Part No.09R9557
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
On Resistance Rds(on)0.025ohm
Drain Source On State Resistance0.025ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd125W
Gate Source Threshold Voltage Max1.5V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The MTB50P03HDLT4G is a P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. It is designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. The device is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche energy specified
- Source-to-drain diode recovery time comparable to a discrete fast recovery diode
- Diode is characterized for use in bridge circuits
- IDSS and VDS (ON) Specified at elevated temperature
- Short heat-sink tab manufactured - not sheared
- Specially designed lead-frame for maximum power dissipation
- -55 to 150°C Operating temperature range
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.025ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
125W
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
