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ON SEMICONDUCTOR  MMUN2115LT1G  Bipolar (BJT) Single Transistor, Brt, PNP, 50 V, 246 mW, 100 mA, 250 hFE

ON SEMICONDUCTOR MMUN2115LT1G
Manufacturer Part No:
MMUN2115LT1G
Newark Part No.:
85W3168
Technical Datasheet:
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Product Overview

The MMUN2115LT1G is a PNP Digital Transistor designed to replace a single device and its external resistor bias network. This bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates the individual components by integrating into a single device.
  • Simplifies circuit Design
  • Reduces component count
  • Halogen-free
  • AEC-Q101 qualified and PPAP capable

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
-
Power Dissipation Pd:
246mW
DC Collector Current:
100mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Industrial
  • Power Management
  • Automotive

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Associated Products