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ON SEMICONDUCTOR  MMSD301T1G  RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOD-123

ON SEMICONDUCTOR MMSD301T1G
Technical Data Sheet (137.88KB) EN See all Technical Docs

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Product Overview

The MMSD301T1G is a Schottky Barrier Diode designed for high-efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
  • Extremely low minority carrier lifetime
  • Very low capacitance
  • Low reverse leakage
  • -55 to 125°C Operating junction temperature range

 

Product Information

Diode Configuration:
Single
Reverse Voltage Vr:
30V
Forward Current If Max:
200mA
Forward Voltage VF Max:
600mV
Capacitance Ct:
0.9pF
Diode Case Style:
SOD-123
No. of Pins:
2 Pin
Packaging:
Cut Tape
Product Range:
MMSD3 Series
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • RF Communications;
  • Sensing & Instrumentation;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

RF Schottky Diode, Barrier, Single, 30 V, 200 mA, 600 mV, 0.9 pF, SOD-123

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18,000 in stock

Price for: Each (Supplied on Full Reel)

3000+ $0.035 Promotional price 24000+ $0.035 Promotional price 45000+ $0.035 Promotional price

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Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C

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15000+ $0.049 30000+ $0.047 60000+ $0.044

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BAT54W-G3-08

SCHOTTKY DIODE SOD123

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Price for: Each (Supplied on Full Reel)

15000+ $0.04

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