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ON SEMICONDUCTOR  MMBT6427LT1G  Bipolar (BJT) Single Transistor, Darlington, NPN, 40 V, 300 mW, 500 mA, 200 hFE

ON SEMICONDUCTOR MMBT6427LT1G
Manufacturer Part No:
MMBT6427LT1G
Newark Part No.:
67R1346
Technical Datasheet:
See all Technical Docs

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
-
Power Dissipation Pd:
300mW
DC Collector Current:
500mA
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (20-Jun-2016)

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Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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Bipolar (BJT) Single Transistor, Darlington, NPN, 40 V, 300 mW, 500 mA, 200 hFE

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