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ON SEMICONDUCTOR  MMBT2222LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 250 MHz, 300 mW, 600 mA, 250 hFE

ON SEMICONDUCTOR MMBT2222LT1G

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Product Overview

The MMBT2222LT1G is a 30V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
  • Halogen-free/BFR-free
  • AEC-Q101 qualified and PPAP capable
  • 60VDC Collector to base voltage (VCBO)
  • 5VDC Emitter to base voltage (VEBO)
  • 1100mA DC Peak collector current
  • 556°C/W Thermal resistance, junction to ambient

Applications

Industrial; Power Management

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
300mW
DC Collector Current:
600mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

Applications

  • Industrial;
  • Power Management

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