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ON SEMICONDUCTOR  MMBT2222LT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 250 MHz, 300 mW, 600 mA, 250 hFE

ON SEMICONDUCTOR MMBT2222LT1G
Technical Data Sheet (128.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MMBT2222LT1G is a 30V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
  • Halogen-free/BFR-free
  • AEC-Q101 qualified and PPAP capable
  • 60VDC Collector to base voltage (VCBO)
  • 5VDC Emitter to base voltage (VEBO)
  • 1100mA DC Peak collector current
  • 556°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
300mW
DC Collector Current:
600mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
MMBTxxxx Series
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes

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