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MJE13003G
Bipolar (BJT) Single Transistor, NPN, 400 V, 1.5 A, 1.4 W, TO-126, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE13003G
Newark Part No.71J5859
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Collector Emitter Voltage Max400V
Continuous Collector Current1.5A
Power Dissipation1.4W
Power Dissipation Pd1.4W
DC Collector Current1.5A
DC Current Gain hFE4hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-126
Transition Frequency10MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
400V
Power Dissipation
1.4W
DC Collector Current
1.5A
Transistor Mounting
Through Hole
Transistor Case Style
TO-126
DC Current Gain hFE Min
4hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
400V
Continuous Collector Current
1.5A
Power Dissipation Pd
1.4W
DC Current Gain hFE
4hFE
No. of Pins
3Pins
Transition Frequency
10MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate