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ON SEMICONDUCTOR  2N6284G  Bipolar (BJT) Single Transistor, NPN, 100 V, 160 W, 20 A, 18 hFE

ON SEMICONDUCTOR 2N6284G
Technical Data Sheet (135.70KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N6284G is a NPN Darlington bipolar Power Transistor with monolithic construction, built-in base-emitter shunt resistors, designed for general-purpose amplifier and low-frequency switching applications.
  • High DC current gain
  • 1.09°C/W Junction-to-case thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
160W
DC Collector Current:
20A
DC Current Gain hFE:
18hFE
Transistor Case Style:
TO-204
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-65 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Substitutes

Associated Products

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