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ManufacturerNEXPERIA
Manufacturer Part NoPSMN8R7-80BS,118
Newark Part No.96T7360
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.700 |
| 10+ | $2.350 |
| 100+ | $1.730 |
| 500+ | $1.640 |
| 1600+ | $1.430 |
| 3200+ | $1.340 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN8R7-80BS,118
Newark Part No.96T7360
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id90A
Drain Source On State Resistance7500µohm
On Resistance Rds(on)0.0075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd170W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN8R7-80BS is a N-channel MOSFET suitable for standard level gate drive sources. It is designed and qualified for use in a wide range of load switching, server power supplies, DC-to-DC converters and domestic equipment applications.
- High efficiency due to low switching and conduction losses
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.0075ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
170W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
7500µohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
170W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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