Print Page
PSMN5R5-60YS,115
Power MOSFET, N Channel, 60 V, 100 A, 0.0052 ohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN5R5-60YS,115
Newark Part No.63R8569
Your Part Number
Technical Datasheet
2,079 In Stock
Need more?
720 Delivery in 1-3 Business Days(US stock)
1359 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.710 |
| 10+ | $2.360 |
| 25+ | $2.120 |
| 50+ | $1.860 |
| 100+ | $1.610 |
| 250+ | $1.440 |
| 500+ | $1.280 |
Full Reel
| Quantity | Price |
|---|---|
| 1500+ | $1.580 |
| 3000+ | $1.530 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN5R5-60YS,115
Newark Part No.63R8569
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0036ohm
Drain Source On State Resistance0.0052ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Power Dissipation Pd130W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation130W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
PSMN5R5-60YS,115 is a standard level N-channel MOSFET. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Application includes DC-to-DC converters, Lithium-ion battery protection, load switching, motor control, server power supplies.
- Advanced TrenchMOS provides low RDSon and low gate charge
- High efficiency in switching power converters
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
- Drain source voltage is 60V maximum (Tj ≥ 25°C; Tj ≤ 175°C)
- Drain current is 100A maximum (Tmb = 25°C)
- 0.0036ohm drain source on state resistance
- Total power dissipation is 130W maximum (Tmb = 25°C)
- Total gate charge is 56nC typical (ID = 75A, VDS = 30V, VGS = 10V)
- 4 lead SOT-669 package, junction temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0036ohm
Transistor Case Style
SOT-669
Power Dissipation Pd
130W
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0052ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
130W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Alternatives for PSMN5R5-60YS,115
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate