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PSMN1R2-25YLC,115
MOSFET, N CHANNEL, 25V, 100A, LFPAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R2-25YLC,115
Newark Part No.
Re-Reel55T6970
Cut Tape55T6970
Your Part Number
Technical Datasheet
1,500 In Stock
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.82 |
| 10+ | $1.82 |
| 25+ | $1.70 |
| 50+ | $1.58 |
| 100+ | $1.29 |
| 250+ | $1.17 |
| 500+ | $1.05 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R2-25YLC,115
Newark Part No.
Re-Reel55T6970
Cut Tape55T6970
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance1050µohm
On Resistance Rds(on)0.00105ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd179W
Gate Source Threshold Voltage Max1.45V
Power Dissipation179W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R2-25YLC is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supplies, sync rectifier and domestic equipment applications.
- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra-low RDS (ON) and low parasitic inductance
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.00105ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
179W
Power Dissipation
179W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1050µohm
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.45V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability