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PBR941,215
Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 360 mW, 50 mA, SOT-23
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ManufacturerNXP
Manufacturer Part NoPBR941,215
Newark Part No.75R4735
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoPBR941,215
Newark Part No.75R4735
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo10V
Collector Emitter Voltage Max10V
Transition Frequency8GHz
Power Dissipation360mW
Power Dissipation Pd360mW
DC Collector Current50mA
Continuous Collector Current50mA
Transistor Case StyleSOT-23
DC Current Gain hFE100hFE
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE Min100hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2019)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
10V
Power Dissipation
360mW
DC Collector Current
50mA
Transistor Case Style
SOT-23
RF Transistor Case
SOT-23
DC Current Gain hFE Min
100hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (15-Jan-2019)
Collector Emitter Voltage V(br)ceo
10V
Transition Frequency
8GHz
Power Dissipation Pd
360mW
Continuous Collector Current
50mA
DC Current Gain hFE
100hFE
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2019)
Download Product Compliance Certificate
Product Compliance Certificate