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BLF647,112
RF FET Transistor, 65 V, 18 A, 290 W, 600 MHz, SOT-540A
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ManufacturerNXP
Manufacturer Part NoBLF647,112
Newark Part No.70R2868
Your Part Number
Technical Datasheet
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Product Information
ManufacturerNXP
Manufacturer Part NoBLF647,112
Newark Part No.70R2868
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id18A
Power Dissipation290W
Power Dissipation Pd290W
Operating Frequency Min-
Operating Frequency Max600MHz
Transistor Case StyleSOT-540A
No. of Pins5Pins
RF Transistor CaseSOT-540A
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
290W
Operating Frequency Min
-
Transistor Case Style
SOT-540A
RF Transistor Case
SOT-540A
Channel Type
N Channel
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
18A
Power Dissipation Pd
290W
Operating Frequency Max
600MHz
No. of Pins
5Pins
Operating Temperature Max
200°C
Transistor Mounting
Flange
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate