Print Page
BLF278,112
RF FET Transistor, 50 V, 18 A, 500 W, 108 MHz, 225 MHz, SOT-262A1
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNXP
Manufacturer Part NoBLF278,112
Newark Part No.70R2768
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoBLF278,112
Newark Part No.70R2768
Technical Datasheet
Drain Source Voltage Vds50V
Continuous Drain Current Id18A
Power Dissipation500W
Power Dissipation Pd500W
Operating Frequency Min108MHz
Operating Frequency Max225MHz
Transistor Case StyleSOT-262A1
RF Transistor CaseSOT-262A1
No. of Pins5Pins
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
50V
Power Dissipation
500W
Operating Frequency Min
108MHz
Transistor Case Style
SOT-262A1
No. of Pins
5Pins
Channel Type
N Channel
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
18A
Power Dissipation Pd
500W
Operating Frequency Max
225MHz
RF Transistor Case
SOT-262A1
Operating Temperature Max
200°C
Transistor Mounting
Flange
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate