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NXP  BFQ67,215  Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 300 mW, 50 mA, 100 hFE

NXP BFQ67,215
Technical Data Sheet (248.52KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
10V
Transition Frequency ft:
8GHz
Power Dissipation Pd:
300mW
DC Collector Current:
50mA
DC Current Gain hFE:
100hFE
RF Transistor Case:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor