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BFQ67,215
Bipolar - RF Transistor, Wideband, NPN, 10 V, 8 GHz, 300 mW, 50 mA, SOT-23
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ManufacturerNXP
Manufacturer Part NoBFQ67,215
Newark Part No.
Re-Reel75R4641
Cut Tape75R4641
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerNXP
Manufacturer Part NoBFQ67,215
Newark Part No.
Re-Reel75R4641
Cut Tape75R4641
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo10V
Collector Emitter Voltage Max10V
Transition Frequency8GHz
Power Dissipation300mW
Power Dissipation Pd300mW
Continuous Collector Current50mA
DC Collector Current50mA
DC Current Gain hFE100hFE
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE Min100hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
10V
Power Dissipation
300mW
Continuous Collector Current
50mA
DC Current Gain hFE
100hFE
RF Transistor Case
SOT-23
DC Current Gain hFE Min
100hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage V(br)ceo
10V
Transition Frequency
8GHz
Power Dissipation Pd
300mW
DC Collector Current
50mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate