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BFG31,115
Bipolar - RF Transistor, Wideband, PNP, -15 V, 5 GHz, 1 W, -100 mA, SOT-223
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No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoBFG31,115
Newark Part No.70R2507
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max-15V
Collector Emitter Voltage V(br)ceo-15V
Transition Frequency5GHz
Power Dissipation1W
Power Dissipation Pd1W
DC Collector Current-100mA
Continuous Collector Current-100mA
Transistor Case StyleSOT-223
DC Current Gain hFE25hFE
RF Transistor CaseSOT-223
No. of Pins3Pins
DC Current Gain hFE Min25hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-15V
Power Dissipation
1W
DC Collector Current
-100mA
Transistor Case Style
SOT-223
RF Transistor Case
SOT-223
DC Current Gain hFE Min
25hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
-15V
Transition Frequency
5GHz
Power Dissipation Pd
1W
Continuous Collector Current
-100mA
DC Current Gain hFE
25hFE
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate