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NXP  BFG135,115  Bipolar - RF Transistor, Wideband, NPN, 15 V, 7 GHz, 1 W, 150 mA, 130 hFE

NXP BFG135,115
Technical Data Sheet (316.94KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
15V
Transition Frequency ft:
7GHz
Power Dissipation Pd:
1W
DC Collector Current:
150mA
DC Current Gain hFE:
130hFE
RF Transistor Case:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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