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BFG135,115
Bipolar - RF Transistor, Wideband, NPN, 15 V, 7 GHz, 1 W, 150 mA, SOT-223
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ManufacturerNXP
Manufacturer Part NoBFG135,115
Newark Part No.
Re-Reel75R4617
Cut Tape75R4617
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerNXP
Manufacturer Part NoBFG135,115
Newark Part No.
Re-Reel75R4617
Cut Tape75R4617
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Collector Emitter Voltage V(br)ceo15V
Transition Frequency7GHz
Power Dissipation Pd1W
Power Dissipation1W
Continuous Collector Current150mA
DC Collector Current150mA
DC Current Gain hFE130hFE
Transistor Case StyleSOT-223
RF Transistor CaseSOT-223
No. of Pins3Pins
DC Current Gain hFE Min130hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Power Dissipation Pd
1W
Continuous Collector Current
150mA
DC Current Gain hFE
130hFE
RF Transistor Case
SOT-223
DC Current Gain hFE Min
130hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage Max
15V
Transition Frequency
7GHz
Power Dissipation
1W
DC Collector Current
150mA
Transistor Case Style
SOT-223
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate