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2N7002BKM,315
Power MOSFET, N Channel, 60 V, 450 mA, 1 ohm, SOT-883, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part No2N7002BKM,315
Newark Part No.55T7737
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002BKM,315
Newark Part No.55T7737
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id450mA
Drain Source On State Resistance1ohm
On Resistance Rds(on)1ohm
Transistor Case StyleSOT-883
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd360mW
Gate Source Threshold Voltage Max1.6V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The 2N7002BKM is a N-channel enhancement-mode MOSFET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
- Logic-level compatible
- Very fast switching
- ESD protection up to 2kV
- AEC-Q101 qualified
Applications
Automotive, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
450mA
On Resistance Rds(on)
1ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
360mW
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1ohm
Transistor Case Style
SOT-883
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate