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MULTICOMP  2N3906  Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 250 MHz, 625 mW, 200 mA, 100 hFE

MULTICOMP 2N3906

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Product Overview

The 2N3906 from Multicomp is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification.
  • Collector emitter voltage (Vce) of -40V
  • Continuous collector current (Ic) of -200mA
  • Power dissipation of 625mW
  • Operating junction temperature range from -55°C to 150°C
  • Collector emitter saturation voltage is less than 400mV at Ic=10mA
  • DC current gain is greater than 30 at Ic=100mA

Applications

Signal Processing; Power Management; Portable Devices; Consumer Electronics; Industrial

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Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
250MHz
Power Dissipation Pd:
625mW
DC Collector Current:
200mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

Substitutes

Bipolar - RF Transistor, PNP, 80 V, 625 mW, 800 mA, 250 hFE

NTE ELECTRONICS

3,940: 

Price for: Each

1+ $0.142 100+ $0.134 500+ $0.131 1000+ $0.128 More pricing

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