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MULTICOMP  2N3704  Bipolar (BJT) Single Transistor, NPN, 30 V, 100 MHz, 625 mW, 800 mA, 100 hFE

MULTICOMP 2N3704
Technical Data Sheet (54.12KB) EN See all Technical Docs

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Product Overview

The 2N3704 is a NPN silicon planar epitaxial Bipolar Transistor with collector-emitter voltage at 30V and power dissipation at 625mW.
  • 200°C/W Junction-to-ambient thermal resistance

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
625mW
DC Collector Current:
800mA
DC Current Gain hFE:
100hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Substitutes

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