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LND150N3-G
Power MOSFET, N Channel, 500 V, 30 mA, 1000 ohm, TO-92, Through Hole
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|---|---|
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| 10+ | $0.577 |
| 25+ | $0.536 |
| 50+ | $0.505 |
| 100+ | $0.474 |
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoLND150N3-G
Newark Part No.67X5304
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id30mA
On Resistance Rds(on)850ohm
Drain Source On State Resistance1000ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Power Dissipation Pd740mW
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation740mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
- Free from secondary breakdown
- Low power drive requirement
- Easy to parallel
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and low CISS
- ESD gate protection
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850ohm
Transistor Case Style
TO-92
Power Dissipation Pd
740mW
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
30mA
Drain Source On State Resistance
1000ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
0V
Power Dissipation
740mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability