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Available to Order
Manufacturer Standard Lead Time: 101 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQA30N40Copy
Newark Part No.58K1514
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds400V
Continuous Drain Current Id30A
On Resistance Rds(on)0.14ohm
Drain Source On State Resistance0.14ohm
Transistor MountingThrough Hole
Power Dissipation Pd290W
Rds(on) Test Voltage10V
Transistor Case StyleTO-3PN
Gate Source Threshold Voltage Max5V
Power Dissipation290W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FQA30N40 is an N-channel enhancement mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Applications
Lighting, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
400V
On Resistance Rds(on)
0.14ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.14ohm
Power Dissipation Pd
290W
Transistor Case Style
TO-3PN
Power Dissipation
290W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
