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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXKR25N80CCopy
Newark Part No.24M3048
Your Part Number
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXKR25N80CCopy
Newark Part No.24M3048
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id25A
Drain Source On State Resistance150mohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleISOPLUS-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd250W
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Product Overview
The IXKR25N80C is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching (UIS) and low ON-resistance.
- ISOPLUS247™ package with DCB base
- Electrical isolation towards the heat sink
- Low coupling capacitance to the heat sink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
- Fast CoolMOS™ power MOSFET 3rd generation
- High blocking capability
- Low thermal resistance due to reduced chip thickness
- Enhanced total power density
- Low RDS (ON)
- High VDSS
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
250W
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Drain Source Voltage Vds
800V
Drain Source On State Resistance
150mohm
Transistor Case Style
ISOPLUS-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate