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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N10
Newark Part No.14J1681
Technical Datasheet
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N10
Newark Part No.14J1681
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
Drain Source On State Resistance8000µohm
On Resistance Rds(on)0.008ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-227B
Transistor MountingModule
Gate Source Threshold Voltage Max4V
Power Dissipation Pd600W
Power Dissipation600W
Operating Temperature Max150°C
No. of Pins4Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Low drain-to-tab capacitance
- Low inductance
- Avalanche rated
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180A
Drain Source On State Resistance
8000µohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
600W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.008ohm
Transistor Case Style
SOT-227B
Gate Source Threshold Voltage Max
4V
Power Dissipation
600W
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate