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IXYS SEMICONDUCTOR  IXFH26N50  MOSFET Transistor, N Channel, 26 A, 500 V, 200 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR IXFH26N50
Technical Data Sheet (158.00KB) EN See all Technical Docs

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Product Overview

The IXFH26N50 is a 500V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS) rated
  • Low inductance offers easy to drive and protect
  • Fast intrinsic rectifier
  • Space-saving s
  • High power density

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
26A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-247AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products