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IXFH26N50 - 

MOSFET Transistor, N Channel, 26 A, 500 V, 200 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR IXFH26N50

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Manufacturer Part No:
IXFH26N50
Newark Part No.:
76K1241
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
300W
:
4V
:
-
:
150°C
:
26A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-247AD
:
200mohm
:
500V
:
-
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Product Overview

The IXFH26N50 is a 500V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS) rated
  • Low inductance offers easy to drive and protect
  • Fast intrinsic rectifier
  • Space-saving s
  • High power density

Applications

Power Management, Industrial

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