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IXFH120N20P
Power MOSFET, N Channel, 200 V, 120 A, 0.022 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH120N20PCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.58M7590
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 1+ | $16.670 |
| 10+ | $14.530 |
| 25+ | $12.390 |
| 50+ | $10.250 |
| 100+ | $9.480 |
| 250+ | $8.840 |
| 500+ | $8.660 |
Price for:Each
Minimum: 1
Multiple: 1
$16.67
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH120N20PCopy
Manufacturer Standard Lead Time28 weeks
Newark Part No.58M7590
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id120A
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd714W
Gate Source Threshold Voltage Max5V
Power Dissipation714W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
Product Overview
The IXFH120N20P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and low drain-to-tab capacitance. It is suitable for DC-to-DC converters, battery chargers, DC choppers and high speed power switching applications.
- International standard packages
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.022ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
On Resistance Rds(on)
0.022ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
714W
Power Dissipation
714W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
