Low

DE475-102N21A - 

RF FET Transistor, 1 kV, 24 A, 1.8 kW, 30 MHz, SMD

IXYS RF DE475-102N21A

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Manufacturer:
IXYS RF IXYS RF
Manufacturer Part No:
DE475-102N21A
Newark Part No.:
42M1757
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
1.8kW
:
SMD
:
30MHz
:
175°C
:
24A
:
6Pins
:
-
:
-
:
1kV
:
-
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Product Overview

The DE475-102N21A is a 1000V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

Applications

Power Management, Industrial