Low

IXYS RF  DE475-102N21A  RF FET Transistor, 1 kV, 24 A, 1.8 kW, 30 MHz, SMD

IXYS RF DE475-102N21A

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Product Overview

The DE475-102N21A is a 1000V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

Applications

Power Management; Industrial

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Product Information

Drain Source Voltage Vds:
1kV
Continuous Drain Current Id:
24A
Power Dissipation Pd:
1.8kW
Operating Frequency Min:
-
Operating Frequency Max:
30MHz
RF Transistor Case:
SMD
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Industrial

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