Low

IXYS RF  DE150-501N04A  RF FET Transistor, 500 V, 4.5 A, 200 W, 100 MHz, DE-150

IXYS RF DE150-501N04A
Technical Data Sheet (142.84KB) EN See all Technical Docs

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Product Overview

The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching

 

Product Information

Drain Source Voltage Vds:
500V
Continuous Drain Current Id:
4.5A
Power Dissipation Pd:
200W
Operating Frequency Min:
-
Operating Frequency Max:
100MHz
RF Transistor Case:
DE-150
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • RF Communications

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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