IXYS RF  DE150-501N04A  RF FET Transistor, 500 V, 4.5 A, 200 W, 100 MHz, DE-150

IXYS RF DE150-501N04A

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  • Manufacturer:
  • Newark Part No.: 42M1752
  • Manufacturer Part No DE150-501N04A

Product Overview

The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching


RF Communications
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Product Information

  • Drain Source Voltage Vds 500V
  • Continuous Drain Current Id 4.5A
  • Power Dissipation Pd 200W
  • Operating Frequency Min -
  • Operating Frequency Max 100MHz
  • RF Transistor Case DE-150
  • No. of Pins 6Pins
  • Operating Temperature Max 175°C
  • Transistor Type RF MOSFET
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised


Availability:  85

  • 85 in stock for same day shipping
Check stock and lead times
  • 75 Further stock expected to ship on May 19, 2016
  • More stock available week commencing 8/15/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $39.48 $39.48



Quantity List Price
1 - 24 $39.48
25 - 49 $37.60
50 - 99 $35.88
100 - 249 $34.78
250+ $33.68

Legislation and Environmental

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