Print Page
Image is for illustrative purposes only. Please refer to product description.

No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRFR4105Copy
Newark Part No.29T7208
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id27A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd68W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation68W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The AUIRFR4105 is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
- Advanced planar technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Repetitive avalanche allowed up to Tjmax
Applications
Automotive, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
27A
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
68W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.045ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
68W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
