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IPW65R110CFDFKSA1
MOSFET Transistor, N Channel, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPW65R110CFDFKSA1
Newark Part No.85X6043
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW65R110CFDFKSA1
Newark Part No.85X6043
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds700V
Continuous Drain Current Id31.2A
Drain Source On State Resistance0.099ohm
On Resistance Rds(on)0.099ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd277.8W
Gate Source Threshold Voltage Max4V
Power Dissipation277.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.099ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
31.2A
On Resistance Rds(on)
0.099ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
277.8W
Power Dissipation
277.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate