INFINEON  IGP50N60TXKSA1  IGBT Single Transistor, 100 A, 1.5 V, 333 W, 600 V, TO-220, 3 Pins

Technical Data Sheet (528.86KB) EN See all Technical Docs

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Product Overview

The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
  • Lowest Vce (sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
  • Very soft, fast recovery anti-parallel emitter controlled diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Comprehensive portfolio in 600V and 1200V for flexibility of design
  • High device reliability
  • ±20V Gate to emitter voltage (VGE)
  • 0.45K/W IGBT thermal resistance, junction to case
  • 40K/W IGBT thermal resistance, junction - ambient


Product Information

DC Collector Current:
Collector Emitter Saturation Voltage Vce(on):
Power Dissipation Pd:
Collector Emitter Voltage V(br)ceo:
Transistor Case Style:
No. of Pins:
Operating Temperature Max:
Product Range:
Automotive Qualifications Standard:
To Be Advised

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