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IGP50N60TXKSA1 - 

IGBT Single Transistor, 100 A, 1.5 V, 333 W, 600 V, TO-220, 3 Pins

INFINEON IGP50N60TXKSA1

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IGP50N60TXKSA1
Newark Part No.:
13T9414
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
333W
:
-
:
600V
:
175°C
:
3Pins
:
-
:
100A
:
TO-220
:
1.5V
:
-
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Product Overview

The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
  • Lowest Vce (sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
  • Very soft, fast recovery anti-parallel emitter controlled diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Comprehensive portfolio in 600V and 1200V for flexibility of design
  • High device reliability
  • ±20V Gate to emitter voltage (VGE)
  • 0.45K/W IGBT thermal resistance, junction to case
  • 40K/W IGBT thermal resistance, junction - ambient

Applications

Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial

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