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FP35R12W2T4
IGBT Module, PIM, 35 A, 2.25 V, 215 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoFP35R12W2T4
Newark Part No.84R7210
Technical Datasheet
IGBT ConfigurationPIM
Continuous Collector Current35A
Collector Emitter Saturation Voltage1.85V
Power Dissipation215W
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
IGBT Configuration
PIM
Collector Emitter Saturation Voltage
1.85V
Operating Temperature Max
150°C
IGBT Termination
Press Fit
IGBT Technology
-
Product Range
-
Continuous Collector Current
35A
Power Dissipation
215W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (27-Jun-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate