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BSD235CH6327XTSA1
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 950 mA, 950 mA, 0.266 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSD235CH6327XTSA1
Newark Part No.47Y8000
Also Known AsBSD235C H6327, SP000917610
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.440 |
| 10+ | $0.270 |
| 25+ | $0.237 |
| 50+ | $0.203 |
| 100+ | $0.170 |
| 250+ | $0.149 |
| 500+ | $0.127 |
| 1000+ | $0.113 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSD235CH6327XTSA1
Newark Part No.47Y8000
Also Known AsBSD235C H6327, SP000917610
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id950mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel950mA
Continuous Drain Current Id P Channel950mA
Drain Source On State Resistance N Channel0.266ohm
Drain Source On State Resistance P Channel0.266ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel500mW
Power Dissipation P Channel500mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSD235C H6327 is a N/P-channel Power MOSFET within the same package are part of Infineon's famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is suitable for use with DC to Dc converters and on-board charger applications.
- Complementary P + N channel
- Enhancement-mode
- Avalanche rated
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
950mA
Drain Source On State Resistance P Channel
0.266ohm
No. of Pins
6Pins
Power Dissipation P Channel
500mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
950mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
950mA
Drain Source On State Resistance N Channel
0.266ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65