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NDS352AP - 

MOSFET Transistor, P Channel, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V

NDS352AP - MOSFET Transistor, P Channel, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V

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Manufacturer Part No:
NDS352AP
Newark Part No.:
58K2017
Technical Datasheet:
(EN)
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Product Overview

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low RDS (ON)
  • Exceptional on-resistance and maximum DC current capability

Applications

Power Management, Consumer Electronics, Computers & Computer Peripherals

Product Information

:
P Channel
:
900mA
:
-30V
:
0.25ohm
:
-10V
:
-1.7V
:
500mW
:
SuperSOT
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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