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FAIRCHILD SEMICONDUCTOR  NDS352AP  MOSFET Transistor, P Channel, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR NDS352AP

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Product Overview

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
  • High density cell design for extremely low RDS (ON)
  • Exceptional on-resistance and maximum DC current capability

Applications

Power Management; Consumer Electronics; Computers & Computer Peripherals

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
900mA
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.7V
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Consumer Electronics;
  • Computers & Computer Peripherals

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MOSFET Transistor, P Channel, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V

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MOSFET Transistor, P Channel, 900 mA, 30 V, 0.25 ohm, -10 V, -1.7 V

FAIRCHILD SEMICONDUCTOR

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Price for: Each (Supplied on Full Reel)

1+ $0.139 9000+ $0.138 24000+ $0.13 45000+ $0.116

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