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HGTG5N120BND
IGBT, 21 A, 2.45 V, 167 W, 1.2 kV, TO-247, 3 Pins
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ManufacturerONSEMI
Manufacturer Part NoHGTG5N120BND
Newark Part No.98B1932
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTG5N120BND
Newark Part No.98B1932
Technical Datasheet
DC Collector Current21A
Continuous Collector Current21A
Collector Emitter Saturation Voltage Vce(on)2.45V
Collector Emitter Saturation Voltage2.45V
Power Dissipation Pd167W
Power Dissipation167W
Collector Emitter Voltage Max1.2kV
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
DC Collector Current
21A
Collector Emitter Saturation Voltage Vce(on)
2.45V
Power Dissipation Pd
167W
Collector Emitter Voltage Max
1.2kV
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Continuous Collector Current
21A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation
167W
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate