HGTG40N60B3 - 

IGBT Single Transistor, 70 A, 1.4 V, 290 W, 600 V, TO-247, 3 Pins

HGTG40N60B3 - IGBT Single Transistor, 70 A, 1.4 V, 290 W, 600 V, TO-247, 3 Pins

The actual product may differ from image shown

Manufacturer Part No:
Newark Part No.:
Technical Datasheet:
See all Technical Docs

Product Overview

The HGTG40N60B3 is a N-channel PT IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C.
  • Short-circuit rating
  • 100ns Fall time @ TJ = 150°C
  • 290W Total power dissipation @ TC = 25°C


Power Management, Motor Drive & Control

Product Information

Find similar products Choose and modify the attributes above to find similar products.


Associated Products

Related Searches

US continental orders over $49 and under 50 pounds may qualify for free ground shipping. Click the link for the full Terms and Conditions of the offer.

163 In stock

for same day shipping

see cut-off times
Check stock and lead times
More stock available week commencing 2/5/18
$8.14 $ 8.14
Price for:
Multiple: 1 Minimum: 1
Quantity Price Your Price
1 + $9.04
No longer stocked:: No Longer Manufactured::
Add to Cart
Total Price:
Total Price: ( )
Total Price: --

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Select document type(s) you want to see and click “Apply Filters” button
Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.