Print Page
HGTG40N60A4
IGBT, 75 A, 1.7 V, 625 W, 600 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoHGTG40N60A4
Newark Part No.60K5973
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGTG40N60A4
Newark Part No.60K5973
Technical Datasheet
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage Vce(on)1.7V
Collector Emitter Saturation Voltage1.7V
Power Dissipation625W
Power Dissipation Pd625W
Collector Emitter Voltage V(br)ceo600V
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCLead
Product Overview
The HGTG40N60A4 is a N-channel IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
- 1.7V Low saturation voltage @ IC = 40A
- 55ns Fall time @ TJ = 125°C
- 625W Total power dissipation @ TC = 25°C
Applications
Power Management, Maintenance & Repair
Technical Specifications
DC Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
625W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Continuous Collector Current
75A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
625W
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate